Deutsch | English | Español | Français | Italiano | Português | Русский | العربية | 日本語 | 简体中文 | 繁體中文 | 한국의 | Türk | Polski
LOGO
Global B2B portal for electronics and ICT industry
Product / Service Supplier Catalogs & Literature    
Search
or
home Product News Catalogs Web TV News & Topics Featured Articles Trade Shows Sourcing Help My allitwares
Product News Content
allitwares > Product News Content > GaN & GaAs Power Amplifiers for Radar, EW & Multi-Function Systems Design
  
Share |
GaN & GaAs Power Amplifiers for Radar, EW & Multi-Function Systems Design

power amplifier, radar, EW, system design


Overrall situational awareness is the goal of any sensor system. Radar in general, is unique in its ability to provide this capability under many environmental conditions. Specific radar configurations (i.e. SAR, Doppler, CW, Pulsed, AESA, etc.) have been optimized to suit specific applications. The characteristics of the portion of the electromagnetic spectrum selected for any of these particular system designs are perhaps the most important to the end user, as it has the greatest impact on the type of information required and received.

Radar systems in the lower microwave frequencies (below 4 GHz) provide the ability to detect objects at long ranges. Higher frequency systems (ie: X-band) have a reduced ability to search at longer ranges but can track and distinguish between items such as a rocket booster stage, debris or a satellite. Such high frequency systems require guidance via lower frequency systems in order to focus on specific search areas due to the relationship between frequency and resolution.

Both commercial and military radar systems will continue to be developed throughout the entire electromagnetic spectrum. Twenty-year federal spectrum requirements for radar bands L through Ku bear out the need for this requirement. With five to ten times the power handling capability, solid-state power amplifiers, employing GaN devices, are ideal for such applications making them suitable replacements in systems where TWTs are currently employed.

Although the use of GaN technology in these applications is growing, CTT's GaAs-based power amplifiers continue to offer specific benefits in low- power low-voltage systems, as well as in those system applications demanding high linearity - GaAs having established a long record of reliability, low cost, wide availability and excellent overall performance.

The nature of continuingly emerging applicactions rely on the complexities made possible by advancements from the digital arena, requiring electronic systems of the future to incorporate faithfully amplified complex wave forms, with multiple modulation schemes and pulse patterns distributed over wide bandwidths.

Multi-function systems will have to transmit and receive with maximum flexibility across a wide bandwidth, sometimes in adjacent channels and/or within the same frequency and/or time slot.

This evolution points toward multiple use hardware to maximize versatility and minimize multifunction cost, size, weight and owner. In one specific application this versatility proves its value by limiting a radar's acceptability to jamming by operating in a frequency-agile ode. This forces any jamming effort to spread its power over the hole bandwidth, even though the radar is only using a very arrow instantaneous bandwidth.

More advanced systems will employ "look ahead" frequency agility wherein the system selects the next operating frequency and checks to see that it is unoccupied. If clear, that frequency is used. If not, another frequency selection is checked, then made.

CTT engineers have developed a proprietary open architecture/common platform which relies on advanced multi-octave combiner design and unique substrate material selection. The result is adaptable, modular amplifiers requiring only a single supply voltage.

CTT's family of amplifiers are finding applications in many of the next generation of high- performance communications, instrumentation and medical systems where high power is required. CTT's new GaN power amplifiers - with 203 operating efficiencies - offer cost-effective performance solutions.

Whether commercial or military, radar system power consumption is an increasingly important design criteria. CTT offers TTL-controlled main bias shut-off circuitry matched to the system's pulse operation. With the amplifier drawing much less power between pulses, both total power consumption and temperature rise is reduced.


In general, most pulse radars operate at a duty cycle of 103 or less. As such, CTT's pulsed power amplifiers are an attractive solution.

Using a TTL control, by turning off the FETs (drain) the amplifier only consumes 100 to 200 mA for the logic and bias circuit. When the TTL is turned on, the unit will operate after a short rise time. During this "on time" the amplifier's power consumption is identical to that in CW operation. Thus, when the duty cycle is 103 or less, the unit will consume much less power. Therefore, the amplifier's heat sink and power supply can be significantly smaller.

Engineered specifically to meet the stringent requirements imposed by many modern system designs, CTT's family of power amplifiers, perform a wide range of functions. Whether the application is narrowband, wideband or a-wideband, operating in pulsed or CW mode, CTT's amplifiers are an ally attractive choice new multi-function systems at effectively conserve space and power assumption though the of several stand- one functions into a single stem.

These amplifiers are designed for commercial, industrial and military applications. For military applications CTT power amplifiers are manufactured to meet the requirements of MIL-STD-883, Methods 2010 and 2017, with soldering compliant to J-STD-001. These procedures also make the amplifiers excellent ices for applications requiring MEL-E-5400.

CTT has shipped thousands amplifiers into many radar, communications, EW, UAV and link programs.CTT's proprietary amplifier designs are the refinement of decades of amplifier and subassembly experience. In addition to this design heritage, these amplifiers take full advantage of the repeatability and cost effectiveness of CTT's fully automated in-house production line.

 

Tags:
 
About this company:
CTT, Inc., established in 1981, is a privately-held company located in Silicon Valley. The Company designs and manufactures GaAs and GaN-based solid-state microwave amplifiers and subassemblies for the domestic and international defense electronics and commercial communications markets. 
Company Information:
Company Name: CTT, Inc
Address: 241 East Java Drive
City: Sunnyvale
State/Province:
ZIP:
Country: U.S.A.
Phone Number: +1-408-541-0596
FAX: +1-408-541-0794
 
Note: The copyright and the ownship of the brand, product names, product numbers, and content mentioned belongs to their repective companies.
 
Product News from this company
Related Product News

2013-09-02

RF Switch Optimizes Performance of Broadband Cable Systems

2013-07-15

LGA-Packaged MOSFETs Help Maximize Efficiency and Battery Life in Space Limited Smart Phone and Tablet PC Applications

2013-05-21

EPIC embedded board offers unlimited extension

2013-05-20

Enhanced LIN Communication Devices with Integrated Voltage Regulation & Watchdog Functionality

2013-05-08

Raspberry PI-based Robot Navigation Computer project on Kickstarter

2013-04-02

Ultra Low Phase Noise Master Crystal Oscillator meets requirements of advanced space applications

2013-04-01

Safe, Efficient Cleaning with Hexane Free Flux Remover

2012-11-30

Aeroflex Introduces the Industry’s Most Realistic Traffic Scenarios for Testing LTE Services

2012-11-23

ASRock Releases Z77 Extreme6/TB4 with the Shockingly Fast Thunderbolt

2012-11-15

New APx4 Wireless System-on-Module— Ideal for Low Power Wireless Gateways
Featured Pages
5 Axis Machining CenterActuatorsAir ToolsAll-in-One Computers
Aluminum ExtrusionsAntennaAudio Power AmplifierAutomatic Coil Winding Machine
Brushless DC MotorsCable AssembliesCapacitorsCar Drive Recorders
CCTV CameraCircuit BreakersCircular ConnectorsClamp Meters
CNC EDMCNC Precision Machining PartsComputer CaseComputer Cooling Fan
Control ValvesCPU Heat SinksCrystal OscillatorsCustom PCB Manufacture
CylindersD-subminiature ConnectorsData Acquisition BoardDC/DC Converters
Die CastingDigital SignageDimmers and Lighting ControlsEarphone and Headset
Ethernet I/O ModulesFanless Embedded ComputerFlash Memory DeviceGear Reducer
Global Position SystemGrinding CenterHeating ElementIC Sockets
InductorIndustrial Ethernet SwitchesIndustrial RobotInjection Molding
iPhone/iPad AccessoriesKeyboard & KeypadKVM SwitchLCD Modules
Lead FramesLED Driver ICsLED LightsMachining Center
Metal EnclosuresMetal Stamping MoldsMicroprocessorOpen Frame Monitor
OscilloscopesPCB EquipmentPlastic FilmsPlastic Housing and Parts
PLCsPOS SystemsPower AdapterPower Supply
Power ToolsRAID ServersRelaysResistor
RF Microwave ConnectorsRFID DevicesSecurity Intercom SystemsServer
Servo MotorSingle Board ComputerSmart PhoneSolenoids
Switching HubTablet PCsTouch Panel ComputerUPS
VoIP Gateway and PhoneWireless Networking  
Contents
· Home
· Product News
· Catalogs
· Web TV
· News & Topics
· Features Articles
· Trade Show
· Sourcing Help
· My Allitwares
Special Zone
· Directory
· Trade Show Supplement
2014 Hannover
Allitwares.com
· About Us
· Promote Your Business
· Advertise
· Partner with Us
· Press Release
· Contact Us
· Term of Use
· Privacy Policy
· Starter Program
· Sitemap
B2B Web Portal Alliance
· Allitwares.com
· Allmetalworking.com
· Allbiomedical.com
· Allautowares.com
Buy Engineer Sample Kits
OEM Sourcing
Language
· Deutsch
· English
· Español
· Français
· Italiano
· Português
· Русский
· العربية
· 日本語
· 简体中文
· 繁體中文
· 한국의
· Türk
· Polski
 
   

Copyrights © 2012 Allitwares Corporation All Rights Reserved. www.allitwares.com is a Division of Allitwares Corporation
www.allitwares.com is a B2B Trade Portal | B2B Web Portal |B2B Marketplace for Electronics and ICT Industry